Beta
⌘K
IR MOSFET™ P-CHANNEL POWER MOSFET ; SO-8 PACKAGE; 59 MOHM;
| Part | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Technology | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Drain to Source Voltage (Vdss) | Supplier Device Package | Package / Case | Package / Case [y] | Package / Case [x] | Power Dissipation (Max) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 2.4 V | 4.5 V 10 V | Surface Mount | MOSFET (Metal Oxide) | 5.4 A | 14 nC | 386 pF | -55 °C | 150 °C | 20 V | 30 V | 8-SO | 8-SOIC | 3.9 mm | 0.154 in | 2.5 W | P-Channel |