DIODE GEN PURP 800V 12A DO214AB
| Part | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Speed | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Supplier Device Package | Current - Average Rectified (Io) | Mounting Type | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Package / Case | Technology | Voltage - Forward (Vf) (Max) @ If [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 1 µA | 78 pF | Standard Recovery >500ns | 200 mA | 800 V | DO-214AB (SMC) | 12 A | Surface Mount | 150 °C | -55 °C | DO-214AB SMC | Standard | |
Taiwan Semiconductor Corporation | 1 µA | 78 pF | 200 mA 500 ns | 800 V | DO-214AB (SMC) | 12 A | Surface Mount | 150 °C | -55 °C | DO-214AB SMC | Standard | 1.1 V | |
Taiwan Semiconductor Corporation | 1 µA | 78 pF | 200 mA 500 ns | 800 V | DO-214AB (SMC) | 12 A | Surface Mount | 150 °C | -55 °C | DO-214AB SMC | Standard | 1.1 V | |
Taiwan Semiconductor Corporation | 1 µA | 78 pF | Standard Recovery >500ns | 200 mA | 800 V | DO-214AB (SMC) | 12 A | Surface Mount | 150 °C | -55 °C | DO-214AB SMC | Standard | 1.1 V |