IR MOSFET™ N-CHANNEL POWER MOSFET ; DPAK TO-252 PACKAGE; 105 MOHM; WIDE SOA
| Part | Drain to Source Voltage (Vdss) | Technology | Package / Case | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Supplier Device Package | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Mounting Type | Rds On (Max) @ Id, Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 100 V | MOSFET (Metal Oxide) | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 2 V | 17 A | 16 V | 34 nC | 79 W | TO-252AA (DPAK) | N-Channel | 800 pF | 4 V | 10 V | Surface Mount | 105 mOhm | -55 °C | 175 ░C |