Catalog
OMNIFET II fully autoprotected Power MOSFET
| Part | Package / Case | Package / Case [y] | Package / Case [x] | Output Configuration | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Output Type | Rds On (Typ) | Fault Protection | Interface | Supplier Device Package | Input Type | Current - Output (Max) [Max] | Ratio - Input:Output [custom] | Number of Outputs | Voltage - Load | Voltage - Supply (Vcc/Vdd) | Switch Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 8-SOIC | 3.9 mm | 0.154 in | Low Side | 150 °C | -40 °C | Surface Mount | N-Channel | 120 mOhm | Current Limiting (Fixed) Over Temperature Over Voltage | On/Off | 8-SOIC | Non-Inverting | 3.5 A | 1:1 | 1 | 36 V | General Purpose | |
STMicroelectronics | 8-SOIC | 3.9 mm | 0.154 in | Low Side | 150 °C | -40 °C | Surface Mount | N-Channel | 120 mOhm | Current Limiting (Fixed) Over Temperature Over Voltage | On/Off | 8-SOIC | Non-Inverting | 3.5 A | 1:1 | 1 | 36 V | General Purpose | |
STMicroelectronics | 8-SOIC | 3.9 mm | 0.154 in | Low Side | 150 °C | -40 °C | Surface Mount | N-Channel | 120 mOhm | Current Limiting (Fixed) Over Temperature Over Voltage | On/Off | 8-SOIC | Non-Inverting | 3.5 A | 1:1 | 2 | 36 V | General Purpose | |
STMicroelectronics | 8-SOIC | 3.9 mm | 0.154 in | Low Side | 150 °C | -40 °C | Surface Mount | N-Channel | 120 mOhm | Current Limiting (Fixed) Over Temperature Over Voltage | On/Off | 8-SOIC | Non-Inverting | 3.5 A | 1:1 | 2 | 36 V | General Purpose |
Description
AI
The VNS3NV04DP-E device is made up of two monolithic chips (OMNIFET II) housed in a standard SO-8 package. The OMNIFET II is designed using STMicroelectronics™ VIPower™ M0-3 technology and is intended for replacement of standard Power MOSFETs in up to 50 kHz DC applications.
Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
Fault feedback can be detected by monitoring voltage at the input pin