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N-Channel Enhancement Mode MOSFET
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N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET
| Part | Package / Case | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Mounting Type | Vgs(th) (Max) @ Id | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | SC-59 SOT-23-3 TO-236-3 | MOSFET (Metal Oxide) | -55 °C | 150 °C | 4 A | 30 V | 10 V | 2.5 V | 464.3 pF | 12 V | Surface Mount | 1.5 V | N-Channel | 5.5 nC | SOT-23-3 | 60 mOhm | 1.4 W |