SSM3J356 Series

Catalog

MOSFET P-CH 60V 2A SOT-23F

Part	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Operating Temperature	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Supplier Device Package	Technology	Vgs(th) (Max) @ Id	FET Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Vgs (Max) [Min]	Vgs (Max) [Max]
Toshiba Semiconductor and Storage SSM3J356R,LF	1 W	60 V	150 °C	300 mOhm	2 A	330 pF	SOT-23-3 Flat Leads	SOT-23F	MOSFET (Metal Oxide)	2 V	P-Channel	4 V	10 V	8.3 nC	Surface Mount	-20 V	10 V