MOSFET N-CH 100V 100A TO264AA
| Part | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Technology | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Vgs(th) (Max) @ Id | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 500 W | 360 nC | TO-264-3 TO-264AA | 20 V | 100 A | 100 V | 12 mOhm | -55 °C | 150 °C | N-Channel | MOSFET (Metal Oxide) | 10 V | TO-264AA (IXFK) | 4 V | Through Hole | 9000 pF | ||
IXYS | TO-264-3 TO-264AA | 20 V | 100 A | 250 V | 27 mOhm | -55 °C | 150 °C | N-Channel | MOSFET (Metal Oxide) | 10 V | TO-264AA (IXFK) | 4 V | Through Hole | 9100 pF | 300 nC | 560 W |