DIODE GEN PURP 600V 22.5A DIE
| Part | Voltage - DC Reverse (Vr) (Max) [Max] | Supplier Device Package | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Speed | Speed | Technology | Mounting Type | Current - Average Rectified (Io) | Package / Case | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 600 V | Die | -40 °C | 175 ░C | Standard Recovery >500ns | 200 mA | Standard | Surface Mount | 22.5 A | Die | 27 µA | 1.6 V |
Infineon Technologies | 600 V | Die | -40 °C | 175 ░C | Standard Recovery >500ns | 200 mA | Standard | Surface Mount | 22.5 A | Die | 27 µA | 1.6 V |
Infineon Technologies | 600 V | Die | -40 °C | 175 ░C | Standard Recovery >500ns | 200 mA | Standard | Surface Mount | 22.5 A | Die | 27 µA | 1.6 V |
Infineon Technologies | 600 V | Die | -40 °C | 175 ░C | Standard Recovery >500ns | 200 mA | Standard | Surface Mount | 22.5 A | Die | 27 µA | 1.6 V |
Infineon Technologies | 600 V | Die | -55 °C | 150 °C | Standard Recovery >500ns | 200 mA | Standard | Surface Mount | 15 A | Die | 27 µA | 1.25 V |