DMN10H220LFDF Series

100V N-Channel Enhancement Mode MOSFET

Catalog

100V N-Channel Enhancement Mode MOSFET

Part	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Configuration	Power - Max [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Supplier Device Package	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]
Diodes Inc DMN10H220LPDW-13	2.5 V	6.7 nC	2 N-Channel (Dual)	2.2 W	100 V	-55 °C	150 °C	MOSFET (Metal Oxide)	PowerDI5060-8 (Type R)	Surface Mount Wettable Flank	8-PowerTDFN	8 A	222 mOhm	384 pF
Diodes Inc DMN10H220LVT-7	2.5 V				100 V	-55 °C	150 °C	MOSFET (Metal Oxide)		Surface Mount	SOT-23-6 Thin TSOT-23-6	1.87 A			220 mOhm	4.5 V 10 V	N-Channel	16 V	401 pF	1.67 W	8.3 nC
Diodes Inc DMN10H220LFVW-7	2.5 V	6.7 nC			100 V	-55 °C	150 °C	MOSFET (Metal Oxide)	PowerDI3333-8 (SWP) Type UX	Surface Mount Wettable Flank	8-PowerVDFN	11 A	222 mOhm	360 pF		4.5 V 10 V	N-Channel	20 V		2.4 W 41 W
Diodes Inc DMN10H220L-7	2.5 V				100 V	-55 °C	150 °C	MOSFET (Metal Oxide)	SOT-23-3	Surface Mount	SC-59 SOT-23-3 TO-236-3	1.4 A			220 mOhm	4.5 V 10 V	N-Channel	16 V	401 pF	1.3 W	8.3 nC
Diodes Inc DMN10H099SFG-13	3 V				100 V	-55 °C	150 °C	MOSFET (Metal Oxide)	POWERDI3333-8	Surface Mount	8-PowerVDFN	4.2 A	80 mOhm			6 V 10 V	N-Channel	20 V	1172 pF	980 mW
Diodes Inc DMN10H170SVTQ-13	3 V	9.7 nC			100 V	-55 °C	150 °C	MOSFET (Metal Oxide)		Surface Mount	SOT-23-6 Thin TSOT-23-6	2.6 A	160 mOhm	1167 pF		4.5 V 10 V	N-Channel	20 V		1.2 W
Diodes Inc DMN10H220LQ-13	2.5 V				100 V	-55 °C	150 °C	MOSFET (Metal Oxide)	SOT-23-3	Surface Mount	SC-59 SOT-23-3 TO-236-3	1.6 A			220 mOhm	4.5 V 10 V	N-Channel	16 V	401 pF	1.3 W	8.3 nC
Diodes Inc DMN10H120SFG-13	3 V				100 V	-55 °C	150 °C	MOSFET (Metal Oxide)	POWERDI3333-8	Surface Mount	8-PowerVDFN	3.8 A	110 mOhm	549 pF		6 V 10 V	N-Channel	20 V		1 W	10.6 nC
Diodes Inc DMN10H220LVT-13	2.5 V				100 V	-55 °C	150 °C	MOSFET (Metal Oxide)		Surface Mount	SOT-23-6 Thin TSOT-23-6	1.87 A			220 mOhm	4.5 V 10 V	N-Channel	16 V	401 pF	1.67 W	8.3 nC
Diodes Inc DMN10H170SFDE-13	3 V	9.7 nC			100 V	-55 °C	150 °C	MOSFET (Metal Oxide)	U-DFN2020-6 (Type E)	Surface Mount	6-PowerUDFN	2.9 A	160 mOhm	1167 pF		4.5 V 10 V	N-Channel	20 V		660 mW

Catalog

100V N-Channel Enhancement Mode MOSFET

Key Features

• 100% Unclamped Inductive Switch (UIS) Test in Production

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Wettable Flank for Improved Optical Inspections

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.