PSMN1R4 Series

N-channel 30 V, 1.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology

Catalog

N-channel 30 V, 1.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology

Part	Package Name	Mounting Type	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Technology
Nexperia USA Inc. PSMN1R4-30YLDX	LFPAK56 Power-SO8	Surface Mount	3840 pF	2.2 V	1.42 mOhm	-55 °C	175 °C	166 W	30 V	SC-100 SOT-669	N-Channel	20 V	100 A	54.8 nC	10 V	4.5 V	MOSFET (Metal Oxide)

Catalog

N-channel 30 V, 1.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology

Description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique "SchottkyPlus" technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.