BUK9Y11 Series

N-channel 80 V, 11 mΩ logic level MOSFET in LFPAK56

Catalog

N-channel 80 V, 11 mΩ logic level MOSFET in LFPAK56

Part	Rds On (Max)	Mounting Type	Input Capacitance (Ciss) (Max)	Package / Case	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Gate Charge (Max)	Package Name	Technology	FET Type	Vgs(th) (Max)	Grade	Qualification	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Max Rds On, Min Rds On)
Nexperia USA Inc. BUK9Y11-30B,115	9 mOhm	Surface Mount	1614 pF	SC-100 SOT-669	30 V	75 W	10 V	4.5 V	-55 °C	175 °C	15 V	16.5 nC 16.5 nC	LFPAK56 Power-SO8	MOSFET (Metal Oxide)	N-Channel	2 V	Automotive	AEC-Q101	59 A
Nexperia USA Inc. BUK9Y11-80EX	10 mOhm	Surface Mount	6506 pF	SC-100 SOT-669	80 V	194 W			-55 °C	175 °C	10 V	44.2 nC	LFPAK56 Power-SO8	MOSFET (Metal Oxide)	N-Channel	2.1 V	Automotive	AEC-Q101	84 A	5 V

Catalog

N-channel 80 V, 11 mΩ logic level MOSFET in LFPAK56

Description

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.