Catalog
8Mb 3-3.6V Parallel Flash
Key Features
• + Organized as 512K x16
• + Single Voltage Read and Write Operations
• – 3.0-3.6V for SST39LF800A
• + Superior Reliability
• – Endurance: 100,000 Cycles (typical)
• – Greater than 100 years Data Retention
• + Low Power Consumption
• (typical values at 14 MHz)
• – Active Current: 9 mA (typical)
• – Standby Current: 3 µA (typical)
• + Sector-Erase Capability
• – Uniform 2 KWord sectors
• + Block-Erase Capability
• – Uniform 32 KWord blocks
• + Fast Read Access Time
• – 55 ns for SST39LF800A
• + Latched Address and Data
• + Fast Erase and Word-Program
• – Sector-Erase Time: 18 ms (typical)
• – Block-Erase Time: 18 ms (typical)
• – Chip-Erase Time: 70 ms (typical)
• – Word-Program Time: 14 µs (typical)
• – Chip Rewrite Time:
• 8 seconds (typical) for SST39LF800A
• + Automatic Write Timing
• – Internal VPP Generation
• + End-of-Write Detection
• – Toggle Bit
• – Data# Polling
• + CMOS I/O Compatibility
• + JEDEC Standard
• – Flash EEPROM Pinouts and command sets
• + Packages Available
• – 48-lead TSOP (12mm x 20mm)
• – 48-ball TFBGA (6mm x 8mm)
• – 48-ball WFBGA (4mm x 6mm)
• – 48-bump XFLGA (4mm x 6mm) – 4 and 8Mbit
• + All non-Pb (lead-free) devices are RoHS compliant
Description
AI
The SST39LF800A is a 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF800A writes (Program or Erase) with a 3.0-3.6V power supply. This device conforms to JEDEC standard pinouts for x16 memories.