Beta
⌘K
IR MOSFET™ P+P DUAL ; SO-8 PACKAGE; 16.3 MOHM;
| Part | FET Feature | Configuration | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Power - Max [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Package / Case [y] | Package / Case [x] | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | Logic Level Gate | 2 P-Channel | Surface Mount | 1740 pF | 16.3 mOhm | 30 V | 2 W | 38 nC | 8-SOIC | 3.9 mm | 0.154 in | -55 °C | 150 °C | MOSFET (Metal Oxide) | 2.4 V | 9.2 A | 8-SO |