IR MOSFET™ N-CHANNEL POWER MOSFET 30 V ; D2PAK TO-263 PACKAGE; 6.3 MOHM;
| Part | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | FET Type | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Technology | Drain to Source Voltage (Vdss) | Vgs (Max) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 26 nC | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 79 W | -55 °C | 175 ░C | 6.3 mOhm | N-Channel | 2.25 V | 87 A | 4.5 V 10 V | 2130 pF | D2PAK | MOSFET (Metal Oxide) | 30 V | 20 V | Surface Mount |