MUR10010 Series
Manufacturer: GeneSiC Semiconductor
DIODE MODULE GP 100V 50A 2TOWER
| Part | Mounting Type | Current - Reverse Leakage | Diode Pair Count | Diode Configuration | Reverse Recovery Time (trr) | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Current - Average Rectified (Io) (per Diode) | Package Name | Technology | Package / Case | Voltage - Forward (Vf) (Max) | Voltage - DC Reverse (Vr) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | Chassis Mount | 25 µA | 1 pair | Common Cathode | 75 ns | 150 °C | -55 °C | 500 ns | 200 mA | 50 A | Twin Tower | Standard | Twin Tower | 1.3 V | 100 V |
GeneSiC Semiconductor | Chassis Mount | 25 µA | 1 pair | Common Anode | 75 ns | 150 °C | -55 °C | 500 ns | 200 mA | 50 A | Twin Tower | Standard | Twin Tower | 1.3 V | 100 V |
GeneSiC Semiconductor | Chassis Mount | 25 µA | 1 pair | Common Cathode | 75 ns | 150 °C | -55 °C | 500 ns | 200 mA | 50 A | Twin Tower | Standard | Twin Tower | 1.3 V | 100 V |
GeneSiC Semiconductor | Chassis Mount | 25 µA | 1 pair | Common Anode | 75 ns | 150 °C | -55 °C | 500 ns | 200 mA | 50 A | Twin Tower | Standard | Twin Tower | 1.3 V | 100 V |