GBU8 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
BRIDGE RECT 1PHASE 600V 3.9A GBU
| Part | Operating Temperature (Min) | Operating Temperature (Max) | Voltage - Forward (Vf) (Max) | Package / Case | Voltage - Peak Reverse (Max) | Diode Type | Technology | Package Name | Current - Reverse Leakage | Current - Average Rectified (Io) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 1 V | 4-SIP GBU | 600 V | Single Phase | Standard | GBU | 5 µA | 3.9 A | Through Hole |
Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 1 V | 4-SIP GBU | 600 V | Single Phase | Standard | GBU | 5 µA | 3.9 A | Through Hole |
 Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 1 V | 4-SIP GBU | 100 V | Single Phase | Standard | GBU | 5 µA | 8 A | Through Hole |
Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 1 V | 4-SIP GBU | 800 V | Single Phase | Standard | GBU | 5 µA | 3.9 A | Through Hole |
Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 1 V | 4-SIP GBU | 600 V | Single Phase | Standard | GBU | 5 µA | 3.9 A | Through Hole |
Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 1 V | 4-SIP GBU | 800 V | Single Phase | Standard | GBU | 5 µA | 3.9 A | Through Hole |
Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 1 V | 4-SIP GBU | 800 V | Single Phase | Standard | GBU | 5 µA | 3.9 A | Through Hole |
Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 1 V | 4-SIP GBU | 800 V | Single Phase | Standard | GBU | 5 µA | 3.9 A | Through Hole |
 Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 1 V | 4-SIP GBU | 1000 V | Single Phase | Standard | GBU | 5 µA | 8 A | Through Hole |
Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 1 V | 4-SIP GBU | 600 V | Single Phase | Standard | GBU | 5 µA | 3.9 A | Through Hole |