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30 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, P-channel Trench MOSFET
30 V, P-channel Trench MOSFET
| Part | Grade | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | FET Type | Power Dissipation (Max) | Rds On (Max) | Qualification | Drain to Source Voltage (Vdss) | Package / Case | Vgs(th) (Max) | Package Name | Input Capacitance (Ciss) (Max) | Technology | Mounting Type | Operating Temperature (Min) | Operating Temperature (Max) | Gate Charge (Max) | Current - Continuous Drain (Id) (Tc) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | Automotive | 10 V | 4.5 V | P-Channel | 110 W | 10 mOhm | AEC-Q101 | 30 V | SC-100 SOT-669 | 3 V | LFPAK56 Power-SO8 | 2360 pF | MOSFET (Metal Oxide) | Surface Mount | -55 °C | 175 °C | 64 nC | 80 A | 20 V |