DMN6017SK3 Series

N-Channel Enhancement Mode MOSFET

Catalog

N-Channel Enhancement Mode MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Technology	FET Type	Package / Case	Rds On (Max) @ Id, Vgs [Max]
Diodes Inc DMN6017SK3-13	2711 pF	4.5 V 10 V	Surface Mount	20 V	55 nC	TO-252 (DPAK)	3 V	-55 °C	150 °C	43 A	60 V	50 W	MOSFET (Metal Oxide)	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	18 mOhm

Catalog

N-Channel Enhancement Mode MOSFET

Key Features

• Low On-Resistance

• Low Input Capacitance

• Lead-Free Finish; RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• Qualified to AEC-Q101 Standards for High Reliability

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.