GD25LE64 Series

Manufacturer: GigaDevice Semiconductor (HK) Limited

Catalog

IC FLASH 64MBIT SPI/QUAD 8USON

Part	Memory Organization	Operating Temperature [Min]	Operating Temperature [Max]	Clock Frequency	Access Time	Memory Type	Memory Size	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Voltage - Supply [Max]	Voltage - Supply [Min]	Technology	Supplier Device Package	Memory Interface	Memory Format	Package / Case	Mounting Type	Package / Case [y]	Package / Case [x]
GigaDevice Semiconductor (HK) Limited GD25LE64EXEEGR	8M x 8	-40 °C	125 °C	133 MHz	6 ns	Non-Volatile	64 Gbit	100 µs	4 ms	2 V	1.65 V	FLASH - NOR (SLC)	8-FO-USON (3x2)	QPI, Quad I/O, SPI	FLASH	8-XFDFN Exposed Pad	Surface Mount
GigaDevice Semiconductor (HK) Limited GD25LE64ETIGR	8M x 8	-40 °C	85 °C	133 MHz	6 ns	Non-Volatile	64 Gbit	60 µs	2.4 ms	2 V	1.65 V	FLASH - NOR (SLC)	8-SOP	QPI, Quad I/O, SPI	FLASH	8-SOIC	Surface Mount	3.9 mm	0.154 in
GigaDevice Semiconductor (HK) Limited GD25LE64EQIGR	8M x 8	-40 °C	85 °C	133 MHz	6 ns	Non-Volatile	64 Gbit	60 µs	2.4 ms	2 V	1.65 V	FLASH - NOR (SLC)	8-USON (4x4)	QPI, Quad I/O, SPI	FLASH	8-XDFN Exposed Pad	Surface Mount
GigaDevice Semiconductor (HK) Limited GD25LE64ESIGR	8M x 8	-40 °C	85 °C	133 MHz	6 ns	Non-Volatile	64 Gbit	60 µs	2.4 ms	2 V	1.65 V	FLASH - NOR (SLC)	8-SOP	QPI, Quad I/O, SPI	FLASH	8-SOIC	Surface Mount	5.3 mm	0.209 "
GigaDevice Semiconductor (HK) Limited GD25LE64ELIGR	8M x 8	-40 °C	85 °C	133 MHz	6 ns	Non-Volatile	64 Gbit	60 µs	2.4 ms	2 V	1.65 V	FLASH - NOR (SLC)	16-WLCSP	QPI, Quad I/O, SPI	FLASH	16-XFBGA, WLCSP	Surface Mount
GigaDevice Semiconductor (HK) Limited GD25LE64E3IGR	8M x 8	-40 °C	85 °C	133 MHz	6 ns	Non-Volatile	64 Gbit	60 µs	2.4 ms	2 V	1.65 V	FLASH - NOR (SLC)	8-WLCSP	QPI, Quad I/O, SPI	FLASH	8-XFBGA, WLCSP	Surface Mount
GigaDevice Semiconductor (HK) Limited GD25LE64EWIGR	8M x 8	-40 °C	85 °C	133 MHz	6 ns	Non-Volatile	64 Gbit	60 µs	2.4 ms	2 V	1.65 V	FLASH - NOR (SLC)	8-WSON (5x6)	QPI, Quad I/O, SPI	FLASH	8-WDFN Exposed Pad	Surface Mount
GigaDevice Semiconductor (HK) Limited GD25LE64ENEGR	8M x 8	-40 °C	125 °C	133 MHz	6 ns	Non-Volatile	64 Gbit	100 µs	4 ms	2 V	1.65 V	FLASH - NOR (SLC)	8-USON (3x4)	QPI, Quad I/O, SPI	FLASH	8-UDFN Exposed Pad	Surface Mount
GigaDevice Semiconductor (HK) Limited GD25LE64ESIGY	8M x 8	-40 °C	85 °C	133 MHz	6 ns	Non-Volatile	64 Gbit	60 µs	2.4 ms	2 V	1.65 V	FLASH - NOR (SLC)	8-SOP	QPI, Quad I/O, SPI	FLASH	8-SOIC	Surface Mount	5.3 mm	0.209 "