TK5A60 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
MOSFET N-CH 600V 5.4A TO220SIS
| Part | FET Type | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Package Name | Drain to Source Voltage (Vdss) | Technology | Rds On (Max) | Power Dissipation (Max) | Package / Case | Vgs(th) (Max) | Operating Temperature | Gate Charge (Max) | Current - Continuous Drain (Id) (Ta) | Input Capacitance (Ciss) (Max) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | N-Channel | Through Hole | 10 V | TO-220SIS | 600 V | MOSFET (Metal Oxide) | 900 mOhm | 30 W | TO-220-3 Full Pack | 3.7 V | 150 °C | 10.5 nC | 5.4 A | 380 pF | 30 V |
 Toshiba Semiconductor and Storage | N-Channel | Through Hole | 10 V | TO-220SIS | 600 V | MOSFET (Metal Oxide) | 1.43 Ohm | 35 W | TO-220-3 Full Pack | 4.4 V | 150 °C | 16 nC | 5 A | 700 pF | 30 V |