IR MOSFET™ N-CHANNEL POWER MOSFET ; TO-220 FULLPAK PACKAGE; 4.2 MOHM;
| Part | Drain to Source Voltage (Vdss) | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs [Max] | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Power Dissipation (Max) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 60 V | Through Hole | -55 °C | 175 ░C | 4 V | N-Channel | 4685 pF | 10 V | TO-220 | 71 A | 4.2 mOhm | MOSFET (Metal Oxide) | 135 nC | 20 V | 46 W | TO-220-3 Full Pack |