FDMA3028N Series

Dual N-Channel PowerTrench® MOSFET 30V, 3.8A, 68mΩ

Catalog

Dual N-Channel PowerTrench® MOSFET 30V, 3.8A, 68mΩ

Part	Operating Temperature (Min)	Operating Temperature (Max)	FET Feature	Package / Case	Power - Max	Current - Continuous Drain (Id)	Rds On (Max)	Mounting Type	Vgs(th) (Max)	Technology	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Package Width	Package Name	Package Length	Channel Count	Configuration	Configuration - Features
ON Semiconductor FDMA3028N	-55 °C	150 °C	Logic Level Gate	6-VDFN Exposed Pad	700 mW	3.8 A	68 mOhm	Surface Mount	1.5 V	MOSFET (Metal Oxide)	5.2 nC	375 pF	30 V	2 mm	6-MicroFET	2 mm	2	N-Channel	Dual

Catalog

Dual N-Channel PowerTrench® MOSFET 30V, 3.8A, 68mΩ

Key Features

• Max rDS(on)= 68 mΩ at VGS= 4.5 V, ID= 3.8 A

• Max rDS(on)= 88 mΩ at VGS= 2.5 V, ID= 3.4 A

• Max rDS(on)= 123 mΩ at VGS= 1.8 V, ID= 2.9 A

• Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm

• RoHS Compliant

Description

This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.