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MOSFET N-CH 55V 80A TO220-3
| Part | Technology | Vgs (Max) | Supplier Device Package | Mounting Type | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | FET Type | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Grade | Qualification | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | MOSFET (Metal Oxide) | 20 V | PG-TO220-3-1 | Through Hole | 55 V | -55 °C | 175 ░C | 8 mOhm | N-Channel | 215 W | 4 V | 2860 pF | 10 V | TO-220-3 | 96 nC | |||
Infineon Technologies | MOSFET (Metal Oxide) | 20 V | PG-TO220-3-1 | Through Hole | 60 V | -55 °C | 175 ░C | 7.4 mOhm | N-Channel | 79 W | 4 V | 4500 pF | 10 V | TO-220-3 | Automotive | AEC-Q101 | 56 nC |