6ESH06 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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DIODE GEN PURP 600V 6A TO277A
| Part | Voltage - DC Reverse (Vr) (Max) | Mounting Type | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Current - Reverse Leakage | Package Name | Technology | Reverse Recovery Time (trr) | Voltage - Forward (Vf) (Max) | Package / Case | Current - Average Rectified (Io) | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 600 V | Surface Mount | 175 °C | -65 °C | 5 µA | TO-277A (SMPC) | Standard | 40 ns | 1.8 V | 3-PowerDFN TO-277 | 6 A | 500 ns | 200 mA | ||
 Vishay General Semiconductor - Diodes Division | 600 V | Surface Mount | 175 °C | -65 °C | 5 µA | TO-277A (SMPC) | Standard | 40 ns | 1.8 V | 3-PowerDFN TO-277 | 6 A | 500 ns | 200 mA | ||
 Vishay General Semiconductor - Diodes Division | 600 V | Surface Mount | 175 °C | -65 °C | 5 µA | TO-277A (SMPC) | Standard | 40 ns | 1.8 V | 3-PowerDFN TO-277 | 6 A | 500 ns | 200 mA | AEC-Q101 | Automotive |