
TC4404 Series
Manufacturer: Microchip Technology
DUAL 1.5 A OPEN-DRAIN MOSFET GATE DRIVER
| Part | Gate Type | Package Name | Current - Peak Output (Sink) | Current - Peak Output (Source) | Input Type | Operating Temperature (Max) | Operating Temperature (Min) | Mounting Type | Number of Drivers | Logic Voltage - VIH | Logic Voltage - VIL | Channel Type | Package Length | Package Width | Rise / Fall Time (Typ) | Rise / Fall Time (Max) | Voltage - Supply (Maximum) | Voltage - Supply (Minimum) | Gate Channel | Driven Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology | IGBT MOSFET N-Channel P-Channel MOSFET | 8-DIP 8-PDIP | 1.5 A | 1.5 A | Inverting | 85 °C | -40 °C | Through Hole | 2 | 2.4 V | 0.8 V | Independent | 0.3 in | 7.62 mm | 40 ns | 40 ns | 18 V | 4.5 V | N-Channel P-Channel | Low-Side |
Microchip Technology | IGBT MOSFET N-Channel P-Channel MOSFET | 8-SOIC | 1.5 A | 1.5 A | Inverting | 70 °C | 0 °C | Surface Mount | 2 | 2.4 V | 0.8 V | Independent | 0.154 in | 3.9 mm | 40 ns | 40 ns | 18 V | 4.5 V | N-Channel P-Channel | Low-Side |
Microchip Technology | IGBT MOSFET N-Channel P-Channel MOSFET | 8-SOIC | 1.5 A | 1.5 A | Inverting | 85 °C | -40 °C | Surface Mount | 2 | 2.4 V | 0.8 V | Independent | 0.154 in | 3.9 mm | 40 ns | 40 ns | 18 V | 4.5 V | N-Channel P-Channel | Low-Side |
Microchip Technology | IGBT MOSFET | 8-DIP 8-PDIP | 1.5 A | 1.5 A | Inverting | 70 °C | 0 °C | Through Hole | 2 | 2.4 V | 0.8 V | Independent | 0.3 in | 7.62 mm | 40 ns | 40 ns | 18 V | 4.5 V | N-Channel P-Channel | Low-Side |
Microchip Technology | IGBT MOSFET N-Channel P-Channel MOSFET | 8-CDIP 8-CERDIP | 1.5 A | 1.5 A | Inverting | 125 °C | -55 °C | Through Hole | 2 | 2.4 V | 0.8 V | Independent | 0.3 in | 7.62 mm | 40 ns | 40 ns | 18 V | 4.5 V | N-Channel P-Channel | Low-Side |
Microchip Technology | IGBT MOSFET N-Channel P-Channel MOSFET | 8-SOIC | 1.5 A | 1.5 A | Inverting | 85 °C | -40 °C | Surface Mount | 2 | 2.4 V | 0.8 V | Independent | 0.154 in | 3.9 mm | 40 ns | 40 ns | 18 V | 4.5 V | N-Channel P-Channel | Low-Side |
Microchip Technology | IGBT MOSFET N-Channel P-Channel MOSFET | 8-SOIC | 1.5 A | 1.5 A | Inverting | 70 °C | 0 °C | Surface Mount | 2 | 2.4 V | 0.8 V | Independent | 0.154 in | 3.9 mm | 40 ns | 40 ns | 18 V | 4.5 V | N-Channel P-Channel | Low-Side |