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MOSFET P-CH 12V 12A 6UDFNB
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Vgs(th) (Max) @ Id | Mounting Type | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Operating Temperature | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Technology | FET Type | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 37.6 nC | 6 V | 1 V | Surface Mount | 6-UDFNB (2x2) | 1.2 V 4.5 V | 12 V | 1.25 W | 150 °C | 2700 pF | 12 A | MOSFET (Metal Oxide) | P-Channel | 12 mOhm |