Beta
⌘K
POWER MOSFET, HEXFET, N CHANNEL, 100 V, 33 A, 0.052 OHM, TO-247AC, THROUGH HOLE
| Part | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Package / Case | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | FET Type | Mounting Type | Rds On (Max) @ Id, Vgs | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 94 nC | 100 V | 1400 pF | -55 °C | 175 ░C | 4 V | TO-247-3 | 33 A | TO-247AC | 140 W | 10 V | 20 V | N-Channel | Through Hole | 52 mOhm | MOSFET (Metal Oxide) |