POWER MOSFET, P CHANNEL, 55 V, 12 A, 0.175 OHM, TO-220AB, THROUGH HOLE
| Part | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Mounting Type | Drain to Source Voltage (Vdss) | Supplier Device Package | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 4 V | -55 °C | 175 ░C | 20 V | Through Hole | 55 V | TO-220AB | MOSFET (Metal Oxide) | 350 pF | P-Channel | TO-220-3 | 10 V | 45 W | 12 A | 175 mOhm | 19 nC |