IXTA180 Series

DiscMSFT NChTrenchGate-Gen1 TO-263D2

Catalog

DiscMSFT NChTrenchGate-Gen1 TO-263D2

Part	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Vgs(th) (Max)	Mounting Type	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Package / Case	Package Name	Gate Charge (Max)	Power Dissipation (Max)	Rds On (Max)	Input Capacitance (Ciss) (Max)	Package Leads
LITTELFUSE IXTA180N10T	100 V	N-Channel	30 V	4.5 V	Surface Mount	180 A	-55 °C	175 °C	10 V	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263AA	151 nC	480 W	6.4 mOhm	6900 pF
LITTELFUSE IXTA180N10T7	100 V	N-Channel	30 V	4.5 V	Surface Mount	180 A	-55 °C	175 °C	10 V	MOSFET (Metal Oxide)		D2PAK TO-263-7 TO-263-7 (IXTA)	151 nC	480 W	6.4 mOhm	6900 pF	6 Leads
LITTELFUSE IXTA180N055T	55 V	N-Channel		4 V	Surface Mount	180 A				MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263AA
LITTELFUSE IXTA180N085T	85 V	N-Channel	20 V	4 V	Surface Mount	180 A	-55 °C	175 °C	10 V	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263AA	170 nC	430 W	5.5 mOhm	7500 pF
LITTELFUSE IXTA180N10T	100 V	N-Channel	30 V	4.5 V	Surface Mount	180 A	-55 °C	175 °C	10 V	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263AA	151 nC	480 W	6.4 mOhm	6900 pF
LITTELFUSE IXTA180N085T7	85 V	N-Channel	20 V	4 V	Surface Mount	180 A	-55 °C	175 °C	10 V	MOSFET (Metal Oxide)		D2PAK TO-263-7 TO-263-7 (IXTA)	170 nC	430 W	5.5 mOhm	7500 pF	6 Leads
LITTELFUSE IXTA180N10T-TRL	100 V	N-Channel	20 V	4.5 V	Surface Mount	180 A	-55 °C	175 °C	10 V	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	151 nC	480 W	6.4 mOhm	6900 pF
LITTELFUSE IXTA180N10T7	100 V	N-Channel	30 V	4.5 V	Surface Mount	180 A	-55 °C	175 °C	10 V	MOSFET (Metal Oxide)		D2PAK TO-263-7 TO-263-7 (IXTA)	151 nC	480 W	6.4 mOhm	6900 pF	6 Leads
LITTELFUSE IXTA180N10T-TRL	100 V	N-Channel	20 V	4.5 V	Surface Mount	180 A	-55 °C	175 °C	10 V	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	151 nC	480 W	6.4 mOhm	6900 pF

Catalog

DiscMSFT NChTrenchGate-Gen1 TO-263D2

Description

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density