DMTH45M5SFVWQ Series

40V +175°C N-Channel Enhancement Mode MOSFET

Catalog

40V +175°C N-Channel Enhancement Mode MOSFET

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Package / Case	Technology	Qualification	FET Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Grade	Current - Continuous Drain (Id) @ 25°C	Mounting Type
Diodes Inc DMTH45M5SFVWQ-13	5.5 mOhm	13.2 nC	PowerDI3333-8 (SWP) Type UX	8-PowerVDFN	MOSFET (Metal Oxide)	AEC-Q101	N-Channel	3.5 V	40 V	20 V	1083 pF	-55 °C	175 ░C	10 V	3.5 W 51 W	Automotive	18 A 71 A	Surface Mount Wettable Flank
Diodes Inc DMTH45M5SFVWQ-7	5.5 mOhm	13.2 nC	PowerDI3333-8 (SWP) Type UX	8-PowerVDFN	MOSFET (Metal Oxide)	AEC-Q101	N-Channel	3.5 V	40 V	20 V	1083 pF	-55 °C	175 ░C	10 V	3.5 W 51 W	Automotive	18 A 71 A	Surface Mount Wettable Flank

Catalog

40V +175°C N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• Low RDS(ON)– Ensures On-State Losses are Minimized

• Excellent Qgdx RDS(ON)Product (FOM)

• Wettable Flank for Improved Optical Inspection

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The DMTH45M5SFVWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: backlighting, power-management functions, and DC-DC converters.