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OPTIMOS™ 5 N-CHANNEL POWER MOSFET 40 V ; PQFN 3.3 X 3.3 PACKAGE; 2.8 MOHM;
| Part | Power Dissipation (Max) | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Technology | Drain to Source Voltage (Vdss) | Vgs (Max) | Mounting Type | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 2.1 W 63 W | N-Channel | -55 °C | 150 °C | 4.5 V 10 V | MOSFET (Metal Oxide) | 40 V | 20 V | Surface Mount | 2.8 mOhm | 21 A 40 A | 32 nC | 8-PowerTDFN | 2300 pF |