Beta
⌘K
OPTIMOS™ N-CHANNEL POWER MOSFET 25 V ; PQFN 3.3 X 3.3 PACKAGE; 3.6 MOHM;
| Part | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Current - Continuous Drain (Id) @ 25°C | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Type | FET Type | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 2 V | -55 °C | 150 °C | MOSFET (Metal Oxide) | 16 A 40 A | 8-PowerTDFN | 1200 pF | 25 V | 16 nC | 2.1 W 37 W | 4.5 V 10 V | 3.6 mOhm | Surface Mount | N-Channel | 20 V |