MSCSM70VR1M10CT3AG-Module Series

700V, 7.5 mOhm, SP3F, Vienna Rectifier mSiC™ MOSFET Module

Catalog

700V, 7.5 mOhm, SP3F, Vienna Rectifier mSiC™ MOSFET Module

Part	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id)	Channel Count	Configuration - Features	Configuration	Input Capacitance (Ciss) (Max)	Package / Case	Mounting Type	Operating Temperature (Max)	Operating Temperature (Min)	Rds On (Max)	Drain to Source Voltage (Vdss)	Technology	Power - Max (Tc)	Gate Charge (Max)
Microchip Technology MSCSM70VR1M10CT3AG	2.4 V	241 A	241 A	2	Phase Leg	N Channel	9000 pF 9000 pF	Module	Chassis Mount	175 °C	-40 °C	9.5 mOhm	700 V	Silicon Carbide (SiC)	690 W	430 nC

Catalog

700V, 7.5 mOhm, SP3F, Vienna Rectifier mSiC™ MOSFET Module

Description

• SiC Power MOSFET - Low RDS(on) - High temperature performance • Kelvin source for easy drive • Low stray inductance • High efficiency converter • Outstanding performance at high frequency operation • Stable temperature behavior • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • RoHS Compliant