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INFINEON OPTIMOS™ 5 POWER MOSFETS IN LOGIC LEVEL FEATURE LOW RDS(ON) AND SMALL FORM FACTOR
| Part | Package / Case | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Technology | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Supplier Device Package | Vgs (Max) | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 8-PowerTDFN | N-Channel | 1300 pF | 2.5 W 52 W | MOSFET (Metal Oxide) | 100 V | -55 °C | 150 °C | 44 A | 14.6 mOhm | 4.5 V 10 V | 2.3 V | PG-TDSON-8-6 | 20 V | Surface Mount | 10 nC |