
MCP14A0901 Series
Manufacturer: Microchip Technology
9 A MOSFET GATE DRIVER WITH LOW INPUT THRESHOLD AND ENABLE
| Part | Gate Type | Logic Voltage - VIH | Logic Voltage - VIL | Gate Channel | Channel Type | Operating Temperature (Max) | Operating Temperature (Min) | Voltage - Supply (Maximum) | Voltage - Supply (Minimum) | Input Type | Driven Configuration | Mounting Type | Number of Drivers | Package Name | Package Length | Package Width | Current - Peak Output (Sink) | Current - Peak Output (Source) | Fall Time (Typ) | Rise Time (Typ) | Grade | Package / Case | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology | |||||||||||||||||||||||
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | 2 V | 0.8 V | N-Channel P-Channel | Synchronous | 125 °C | -40 °C | 18 V | 4.5 V | Inverting | High-Side Low-Side | Surface Mount | 1 | 8-SOIC | 0.154 in | 3.9 mm | 9 A | 9 A | 22 ns | 22 ns | |||
Microchip Technology | MOSFET | 2 V | 0.8 V | N-Channel P-Channel | Synchronous | 125 °C | -40 °C | 18 V | 4.5 V | Inverting | High-Side Low-Side | Surface Mount | 1 | 8-SOIC | 0.154 in | 3.9 mm | 9 A | 9 A | 22 ns | 22 ns | |||
Microchip Technology | IGBT MOSFET | 2 V | 0.8 V | N-Channel P-Channel | Synchronous | 125 °C | -40 °C | 18 V | 4.5 V | Inverting | High-Side Low-Side | Surface Mount | 2 | 8-TDFN | 2 mm | 3 mm | 9 A | 9 A | 22 ns | 22 ns | Automotive | 8-WFDFN Exposed Pad | AEC-Q100 |
Microchip Technology | |||||||||||||||||||||||
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | 2 V | 0.8 V | N-Channel P-Channel | Synchronous | 125 °C | -40 °C | 18 V | 4.5 V | Inverting | High-Side Low-Side | Surface Mount | 1 | 8-MSOP 8-TSSOP 8-MSOP | 0.118 in | 3 mm | 9 A | 9 A | 22 ns | 22 ns | |||
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | 2 V | 0.8 V | N-Channel P-Channel | Synchronous | 125 °C | -40 °C | 18 V | 4.5 V | Inverting | High-Side Low-Side | Surface Mount | 1 | 8-MSOP 8-TSSOP 8-MSOP | 0.118 in | 3 mm | 9 A | 9 A | 22 ns | 22 ns | |||
Microchip Technology | MOSFET N-Channel P-Channel MOSFET | 2 V | 0.8 V | N-Channel P-Channel | Synchronous | 125 °C | -40 °C | 18 V | 4.5 V | Inverting | High-Side Low-Side | Surface Mount | 1 | 8-TDFN | 2 mm | 3 mm | 9 A | 9 A | 22 ns | 22 ns | 8-WFDFN Exposed Pad |