GANFET 2N-CH 120V 3.4A DIE
| Part | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Package / Case | Configuration | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id [Max] | Supplier Device Package | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Technology | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
EPC EPC2110ENGRT | 150 °C | -40 °C | Surface Mount | 80 pF | Die | 2 N-Channel (Dual) Common Source | 3.4 A | 2.5 V | Die | 60 mOhm | 0.8 nC | GaNFET (Gallium Nitride) | 120 V | |||
EPC EPC2110 | 150 °C | -40 °C | 80 pF | Die | 2 N-Channel (Dual) Common Source | 3.4 A | 2.5 V | Die | 60 mOhm | 0.8 nC | GaNFET (Gallium Nitride) | 120 V | ||||
EPC EPC2111 | 150 °C | -40 °C | Surface Mount | Die | 2 N-Channel (Half Bridge) | Die | 8 mOhm, 19 mOhm | 2.2 nC | GaNFET (Gallium Nitride) | 30 V | 2.5 V | 230 pF, 590 pF | 5.7 nC |