IC GATE DRVR HIGH-SIDE 8SOIC
| Part | Supplier Device Package | High Side Voltage - Max (Bootstrap) [Max] | Input Type | Logic Voltage - VIL, VIH | Channel Type | Voltage - Supply [Min] | Voltage - Supply [Max] | Number of Drivers | Operating Temperature [Max] | Operating Temperature [Min] | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Driven Configuration | Mounting Type | Gate Type | Package / Case | Package / Case [y] | Package / Case [x] | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 8-SOIC | 600 V | Non-Inverting | 0.8 V 2.5 V | Single | 9 V | 20 V | 1 | 150 °C | -40 °C | 80 ns | 40 ns | High-Side | Surface Mount | IGBT N-Channel MOSFET | 8-SOIC | 3.9 mm | 0.154 in | 290 mA | 600 mA | ||
Infineon Technologies | 8-PDIP | 600 V | Non-Inverting | 0.8 V 2.5 V | Single | 9 V | 20 V | 1 | 150 °C | -40 °C | 80 ns | 40 ns | High-Side | Through Hole | IGBT N-Channel MOSFET | 8-DIP | 290 mA | 600 mA | 0.3 in | 7.62 mm | ||
Infineon Technologies | 8-PDIP | 600 V | Non-Inverting | 0.8 V 2.5 V | Single | 9 V | 20 V | 1 | 150 °C | -40 °C | 80 ns | 40 ns | High-Side | Through Hole | IGBT N-Channel MOSFET | 8-DIP | 290 mA | 600 mA | 0.3 in | 7.62 mm |