TSM80 Series

Manufacturer: Taiwan Semiconductor Corporation

Catalog

MOSFETS 800V, 12A, SINGLE N-CHANNEL POWER MOSFET

Part	Rds On (Max)	Gate Charge (Max)	Package Name	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Package / Case	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Power Dissipation (Max)	FET Type	Mounting Type
Taiwan Semiconductor Corporation TSM80N400CF C0G	400 mOhm	51 nC	ITO-220S	30 V	10 V	MOSFET (Metal Oxide)	TO-220-3 Full Pack	4 V	-55 °C	150 °C	800 V	1848 pF	12 A	69 W	N-Channel	Through Hole
Taiwan Semiconductor Corporation TSM80N950CI	950 mOhm	19.6 nC	ITO-220	30 V	10 V	MOSFET (Metal Oxide)	Isolated Tab TO-220-3 Full Pack	4 V	-55 °C	150 °C	800 V	691 pF	6 A	25 W	N-Channel	Through Hole
Taiwan Semiconductor Corporation TSM80N1R2CH	1.2 Ohm	19.4 nC	TO-251 (IPAK)	30 V	10 V	MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251AA	4 V	-55 °C	150 °C	800 V	685 pF	5.5 A	110 W	N-Channel	Through Hole
Taiwan Semiconductor Corporation TSM80N400CF	400 mOhm	51 nC	ITO-220S	30 V	10 V	MOSFET (Metal Oxide)	TO-220-3 Full Pack	4 V	-55 °C	150 °C	800 V	1848 pF	12 A	69 W	N-Channel	Through Hole
Taiwan Semiconductor Corporation TSM80N08CZ C0G	8 mOhm	91.5 nC	TO-220	20 V	10 V	MOSFET (Metal Oxide)	TO-220-3	4 V	-55 °C	150 °C	75 V	3905 pF 3905 pF	80 A	113.6 W	N-Channel	Through Hole
Taiwan Semiconductor Corporation TSM80N1R2CL C0G	1.2 Ohm 1.2 Ohm	19.4 nC	TO-262S (I2PAK)	30 V	10 V	MOSFET (Metal Oxide)	I2PAK TO-262-3 Short Leads	4 V	-55 °C	150 °C	800 V	685 pF	5.5 A	110 W	N-Channel	Through Hole
Taiwan Semiconductor Corporation TSM80N1R2CL	1.2 Ohm 1.2 Ohm	19.4 nC	I2PAK	30 V	10 V	MOSFET (Metal Oxide)	I2PAK TO-262-3 Long Leads TO-262AA	4 V	-55 °C	150 °C	800 V	685 pF	5.5 A	110 W	N-Channel	Through Hole
Taiwan Semiconductor Corporation TSM80N950CH C5G	950 mOhm	19.6 nC	TO-251 (IPAK)	30 V	10 V	MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251AA	4 V	-55 °C	150 °C	800 V	691 pF	6 A	110 W	N-Channel	Through Hole
Taiwan Semiconductor Corporation TSM80N950CI C0G	950 mOhm	19.6 nC	ITO-220AB	30 V	10 V	MOSFET (Metal Oxide)	Isolated Tab TO-220-3 Full Pack	4 V	-55 °C	150 °C	800 V	691 pF	6 A	25 W	N-Channel	Through Hole
Taiwan Semiconductor Corporation TSM80N1R2CH C5G	1.2 Ohm	19.4 nC	TO-251 (IPAK)	30 V	10 V	MOSFET (Metal Oxide)	IPAK TO-251-3 Short Leads TO-251AA	4 V	-55 °C	150 °C	800 V	685 pF	5.5 A	110 W	N-Channel	Through Hole