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IR MOSFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ S PACKAGE; 62 MOHM;
| Part | Drain to Source Voltage (Vdss) | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | Supplier Device Package | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Vgs (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 100 V | MOSFET (Metal Oxide) | 530 pF | Surface Mount | DIRECTFET™ SH | 2.2 W 42 W | 4.2 A 19 A | 5 V | 20 V | 62 mOhm | 150 °C | -40 °C | 10 V | 13 nC | DirectFET™ Isometric SH | N-Channel |