SST39VF020 Series

2Mb 2.7-3.6V Parallel Flash

Catalog

2Mb 2.7-3.6V Parallel Flash

Part	Memory Format	Access Time	Memory Width	Memory Depth	Technology	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Memory Interface (Type)	Write Cycle Time - Word	Write Cycle Time - Page	Mounting Type	Memory Type	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Memory Size	Package Length	Package Name	Package Width
Microchip Technology SST39VF020-70-4C-NHE	FLASH	70 ns	8 bit	256 K	FLASH	3.6 V	2.7 V	Parallel	20 µs	20 µs	Surface Mount	Non-Volatile	32-LCC (J-Lead)	0 °C	70 °C	2 Mb	0.45 in	32-PLCC	13.97 mm
Microchip Technology SST39VF020-70-4C-WHE	FLASH	70 ns	8 bit	256 K	FLASH	3.6 V	2.7 V	Parallel	20 µs	20 µs	Surface Mount	Non-Volatile		0 °C	70 °C	2 Mb	0.488 "	32-TFSOP 32-TSOP	12.4 mm
Microchip Technology SST39VF020-70-4I-NHE-T	FLASH	70 ns	8 bit	256 K	FLASH - NOR	3.6 V	2.7 V	Parallel	20 µs	20 µs	Surface Mount	Non-Volatile	32-LCC (J-Lead)	-40 °C	85 °C	2 Mb	0.45 in	32-PLCC	13.97 mm
Microchip Technology SST39VF020-70-4I-WHE	FLASH	70 ns	8 bit	256 K	FLASH	3.6 V	2.7 V	Parallel	20 µs	20 µs	Surface Mount	Non-Volatile		-40 °C	85 °C	2 Mb	0.488 "	32-TFSOP 32-TSOP	12.4 mm
Microchip Technology SST39VF020-70-4C-WHE-T	FLASH	70 ns	8 bit	256 K	FLASH	3.6 V	2.7 V	Parallel	20 µs	20 µs	Surface Mount	Non-Volatile		0 °C	70 °C	2 Mb	0.488 "	32-TFSOP 32-TSOP	12.4 mm
Microchip Technology SST39VF020-70-4C-NHE-T	FLASH	70 ns	8 bit	256 K	FLASH	3.6 V	2.7 V	Parallel	20 µs	20 µs	Surface Mount	Non-Volatile	32-LCC (J-Lead)	0 °C	70 °C	2 Mb	0.45 in	32-PLCC	13.97 mm
Microchip Technology SST39VF020-70-4I-NHE	FLASH	70 ns	8 bit	256 K	FLASH	3.6 V	2.7 V	Parallel	20 µs	20 µs	Surface Mount	Non-Volatile	32-LCC (J-Lead)	-40 °C	85 °C	2 Mb	0.45 in	32-PLCC	13.97 mm
Microchip Technology SST39VF020-70-4I-WHE-T	FLASH	70 ns	8 bit	256 K	FLASH - NOR	3.6 V	2.7 V	Parallel	20 µs	20 µs	Surface Mount	Non-Volatile		-40 °C	85 °C	2 Mb	0.488 "	32-TFSOP 32-TSOP	12.4 mm

Catalog

2Mb 2.7-3.6V Parallel Flash

Description

The SST39VF020 is a 256K x8CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF020 device writes (Program or Erase) with a 2.7-3.6V power supply. The device conforms to JEDEC standard pinouts for x8 memories.