MSRTA600120 Series
Manufacturer: GeneSiC Semiconductor
DIODE MODULE GP 1.2KV 3TOWER
| Part | Voltage - DC Reverse (Vr) (Max) | Diode Pair Count | Diode Configuration | Package Name | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Technology | Mounting Type | Voltage - Forward (Vf) (Max) | Package / Case | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Speed - Recovery Time | Current - Average Rectified (Io) (per Diode) | Current - Reverse Leakage |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 1200 V | 1 pair | Common Cathode | Three Tower | 150 °C | -55 °C | Standard | Chassis Mount | 1.2 V | 3-SMD Module | 200 mA 500 ns | Standard Recovery | 200 mA 200 mA | 500 ns | 600 A | 25 µA |
GeneSiC Semiconductor |