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OPTIMOS™ 3 N-CHANNEL POWER MOSFET 60 V ; PQFN 3.3 X 3.3 PACKAGE; 12.1 MOHM;
| Part | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Technology | Supplier Device Package | Mounting Type | FET Type | Rds On (Max) @ Id, Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Vgs (Max) | Power Dissipation (Max) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 2.2 V | 4.5 V 10 V | 14 A 20 A | 5100 pF | MOSFET (Metal Oxide) | PG-TSDSON-8 | Surface Mount | N-Channel | 6.7 mOhm | -55 °C | 150 °C | 60 V | 20 V | 2.1 W 69 W | 8-PowerVDFN |