GBL06 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 600V 3A GBL
| Part | Diode Type | Current - Reverse Leakage | Operating Temperature (Min) | Operating Temperature (Max) | Voltage - Peak Reverse (Max) | Technology | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) | Mounting Type | Package Name | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | Single Phase | 5 µA | -55 °C | 150 °C | 600 V | Standard | 3 A | 1 V | Through Hole | GBL | 4-SIP GBL |
Vishay General Semiconductor - Diodes Division | Single Phase | 5 µA | -55 °C | 150 °C | 600 V | Standard | 3 A | 1 V | Through Hole | GBL | 4-SIP GBL |
Vishay General Semiconductor - Diodes Division | Single Phase | 5 µA | -55 °C | 150 °C | 600 V | Standard | 3 A | 1 V | Through Hole | GBL | 4-SIP GBL |
Vishay General Semiconductor - Diodes Division | Single Phase | 5 µA | -55 °C | 150 °C | 600 V | Standard | 3 A | 1.1 V | Through Hole | GBL | 4-SIP GBL |
Vishay General Semiconductor - Diodes Division | Single Phase | 5 µA | -55 °C | 150 °C | 600 V | Standard | 3 A | 1 V | Through Hole | GBL | 4-SIP GBL |
Vishay General Semiconductor - Diodes Division | Single Phase | 5 µA | -55 °C | 150 °C | 600 V | Standard | 3 A | 1 V | Through Hole | GBL | 4-SIP GBL |
Vishay General Semiconductor - Diodes Division | Single Phase | 5 µA | -55 °C | 150 °C | 600 V | Standard | 3 A | 1 V | Through Hole | GBL | 4-SIP GBL |