RGP30 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 3A DO201AD
| Part | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Package Name | Reverse Recovery Time (trr) | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Voltage - Forward (Vf) (Max) | Current - Reverse Leakage | Current - Average Rectified (Io) | Package / Case | Mounting Type | Technology | Voltage - DC Reverse (Vr) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 500 ns | 200 mA | DO-201AD | 250 ns | 175 °C | -65 °C | 1.3 V | 5 µA | 3 A | Axial DO-201AD | Through Hole | Standard | 600 V |
Vishay General Semiconductor - Diodes Division | 500 ns | 200 mA | DO-201AD | 500 ns | 175 °C | -65 °C | 1.3 V | 5 µA | 3 A | Axial DO-201AD | Through Hole | Standard | 1 kV |
Vishay General Semiconductor - Diodes Division | 500 ns | 200 mA | DO-201AD | 150 ns | 175 °C | -65 °C | 1.3 V | 5 µA | 3 A | Axial DO-201AD | Through Hole | Standard | 400 V |
Vishay General Semiconductor - Diodes Division | 500 ns | 200 mA | DO-201AD | 250 ns | 175 °C | -65 °C | 1.3 V | 5 µA | 3 A | Axial DO-201AD | Through Hole | Standard | 600 V |
Vishay General Semiconductor - Diodes Division | 500 ns | 200 mA | DO-201AD | 150 ns | 175 °C | -65 °C | 1.3 V | 5 µA | 3 A | Axial DO-201AD | Through Hole | Standard | 400 V |
Vishay General Semiconductor - Diodes Division | 500 ns | 200 mA | DO-201AD | 150 ns | 175 °C | -65 °C | 1.3 V | 5 µA | 3 A | Axial DO-201AD | Through Hole | Standard | 200 V |
Vishay General Semiconductor - Diodes Division | 500 ns | 200 mA | DO-201AD | 500 ns | 175 °C | -65 °C | 1.3 V | 5 µA | 3 A | Axial DO-201AD | Through Hole | Standard | 800 V |
Vishay General Semiconductor - Diodes Division | 500 ns | 200 mA | DO-201AD | 150 ns | 175 °C | -65 °C | 1.3 V | 5 µA | 3 A | Axial DO-201AD | Through Hole | Standard | 100 V |
Vishay General Semiconductor - Diodes Division | 500 ns | 200 mA | DO-201AD | 150 ns | 175 °C | -65 °C | 1.3 V | 5 µA | 3 A | Axial DO-201AD | Through Hole | Standard | 200 V |
Vishay General Semiconductor - Diodes Division | 500 ns | 200 mA | DO-201AD | 250 ns | 175 °C | -65 °C | 1.3 V | 5 µA | 3 A | Axial DO-201AD | Through Hole | Standard | 600 V |