Catalog
40V Dual P-Channel Enhancement Mode MOSFET
Description
AI
TN1.pdf
40V Dual P-Channel Enhancement Mode MOSFET
40V Dual P-Channel Enhancement Mode MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Package / Case | Package / Case [y] | Package / Case [x] | Mounting Type | Technology | Configuration | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Power - Max [Max] | Vgs(th) (Max) @ Id | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 13.9 nC | 40 V | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | MOSFET (Metal Oxide) | 2 P-Channel | -55 °C | 150 °C | 674 pF | 4 A | 1.25 W | 3 V | 8-SO |
Diodes Inc | 13.9 nC | 40 V | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | MOSFET (Metal Oxide) | 2 P-Channel | -55 °C | 150 °C | 674 pF | 4 A | 1.8 W | 3 V | 8-SO |