MOSFET N-CH 30V 86A DPAK
| Part | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Technology | Vgs (Max) | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | FET Type | Package / Case | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 6.5 mOhm | 4.5 V 10 V | 86 A | 2330 pF | MOSFET (Metal Oxide) | 20 V | 30 V | 26 nC | 79 W | TO-252AA (DPAK) | -55 °C | 175 ░C | Surface Mount | N-Channel | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 2.25 V |
Infineon Technologies | 6.5 mOhm | 4.5 V 10 V | 86 A | 2330 pF | MOSFET (Metal Oxide) | 20 V | 30 V | 26 nC | 79 W | TO-252AA (DPAK) | -55 °C | 175 ░C | Surface Mount | N-Channel | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 2.25 V |