IC FLASH 16MBIT SPI/QUAD 8SOP
| Part | Memory Format | Technology | Memory Type | Voltage - Supply [Max] | Voltage - Supply [Min] | Clock Frequency | Memory Interface | Supplier Device Package | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Package / Case [y] | Package / Case [x] | Memory Organization | Mounting Type | Memory Size | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Access Time |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited GD25LE16ETIGR | FLASH | FLASH - NOR (SLC) | Non-Volatile | 2 V | 1.65 V | 133 MHz | QPI, Quad I/O, SPI | 8-SOP | 85 °C | -40 °C | 8-SOIC | 3.9 mm | 0.154 in | 2 M | Surface Mount | 16 Mb | 60 µs | 2.4 ms | 6 ns |
GigaDevice Semiconductor (HK) Limited GD25LE16E3IGR | FLASH | FLASH - NOR (SLC) | Non-Volatile | 2 V | 1.65 V | 133 MHz | QPI, Quad I/O, SPI | 8-WLCSP | 85 °C | -40 °C | 8-XFBGA, WLCSP | 2 M | Surface Mount | 16 Mb | 60 µs | 2.4 ms | 6 ns | ||
GigaDevice Semiconductor (HK) Limited GD25LE16EEIGR | FLASH | FLASH - NOR (SLC) | Non-Volatile | 2 V | 1.65 V | 133 MHz | QPI, Quad I/O, SPI | 8-USON (3x2) | 85 °C | -40 °C | 8-XFDFN Exposed Pad | 2 M | Surface Mount | 16 Mb | 60 µs | 2.4 ms | 6 ns | ||
GigaDevice Semiconductor (HK) Limited GD25LE16EEEGR | FLASH | FLASH - NOR (SLC) | Non-Volatile | 2 V | 1.65 V | 133 MHz | QPI, Quad I/O, SPI | 8-USON (3x2) | 125 °C | -40 °C | 8-XFDFN Exposed Pad | 2 M | Surface Mount | 16 Mb | 100 µs | 4 ms | 6 ns |