GD25LE16 Series
Manufacturer: GigaDevice Semiconductor (HK) Limited
IC FLASH 16MBIT SPI/QUAD 8WLCSP
| Part | Memory Width | Memory Depth | Package Name | Package / Case | Mounting Type | Technology | Write Cycle Time - Page | Write Cycle Time - Word | Clock Frequency | Access Time | Memory Format | Memory Type | Operating Temperature (Max) | Operating Temperature (Min) | Voltage - Supply (Minimum) | Voltage - Supply (Maximum) | Memory Size | Memory Interface (Type) | Package Width | Package Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited | 8 bit | 2 M | 8-WLCSP | 8-XFBGA WLCSP | Surface Mount | FLASH - NOR (SLC) | 2.4 ms | 60 µs | 133 MHz | 6 ns | FLASH | Non-Volatile | 85 °C | -40 °C | 1.65 V | 2 V | 16 Mb | QPI SPI - Quad I/O | ||
GigaDevice Semiconductor (HK) Limited | 8 bit | 2 M | 8-USON | 8-XFDFN Exposed Pad | Surface Mount | FLASH - NOR (SLC) | 2.4 ms | 60 µs | 133 MHz | 6 ns | FLASH | Non-Volatile | 85 °C | -40 °C | 1.65 V | 2 V | 16 Mb | QPI SPI - Quad I/O | 2 mm | 3 mm |
GigaDevice Semiconductor (HK) Limited | 8 bit | 2 M | 8-SOIC 8-SOP | Surface Mount | FLASH - NOR (SLC) | 2.4 ms | 60 µs | 133 MHz | 6 ns | FLASH | Non-Volatile | 85 °C | -40 °C | 1.65 V | 2 V | 16 Mb | QPI SPI - Quad I/O | 3.9 mm | 0.154 in | |
GigaDevice Semiconductor (HK) Limited | 8 bit | 2 M | 8-USON | 8-XFDFN Exposed Pad | Surface Mount | FLASH - NOR (SLC) | 4 ms | 100 µs | 133 MHz | 6 ns | FLASH | Non-Volatile | 125 °C | -40 °C | 1.65 V | 2 V | 16 Mb | QPI SPI - Quad I/O | 2 mm | 3 mm |