Catalog
30 A, 600 V, fast IGBT
Description
AI
This device utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low on-state behavior.
Beta
⌘K
30 A, 600 V, fast IGBT
30 A, 600 V, fast IGBT
| Part | Vce(on) (Max) | Current - Collector (Ic) (Max) | Package / Case | Current - Collector Pulsed (Icm) | Package Name | Mounting Type | Input Type | Td (on) @ 25°C | Td (off) @ 25°C | Switching Energy (On) | Switching Energy (Off) | Operating Temperature (Min) | Operating Temperature (Max) | Power - Max | Voltage - Collector Emitter Breakdown (Max) | Gate Charge | Test Condition Current | Test Condition Voltage | Test Condition Voltage (Secondary) | Test Condition Resistance |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 1.9 V | 35 A | TO-3P-3 Full Pack | 150 A | TO-3P | Through Hole | Standard | 21.5 ns | 180 ns | 300 µJ | 1.28 mJ | -55 °C | 150 °C | 79 W | 600 V | 96 nC | 20 A | 480 V | 15 V | 10 Ohm |