MOSFET N-CH 40V 120A 8SOP
| Part | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Technology | FET Type | Operating Temperature | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Vgs (Max) | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage TPH1R104PB,L1XHQ | 3 V | 120 A | MOSFET (Metal Oxide) | N-Channel | 175 °C | 132 W, 960 mW | 4560 pF | 1.14 mOhm | 55 nC | 8-PowerVDFN | 20 V | 8-SOP Advance (5x5) | 6 V, 10 V | Surface Mount | 40 V |